MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
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منابع مشابه
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH3 as the Inand Nprecursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire templat...
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Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III–V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7 eV rather than the previously accepted value of 1.9 eV obtained from polycrystalli...
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A survey of most recent studies of optical absorption, photoluminescence, photoluminescence excitation, and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented. The samples studied were undoped n-type InN with electron concentrations between 6 1018 and 4 1019 cm– 3. It has been found that hexagonal InN is a narrow-gap semiconductor with a band gap of about...
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